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(Silicon on Insulator) SOI Waf

Most commonly used in MEMS and advanced CMOS integrated circuit fabrication, SOI wafers provide a manufacturing solution which helps reduce power and heat while increasing the speed performance of a device. SOI wafers are a three layer material stack composed of the following: Active layer of prime quality silicon (DEVICE LAYER) over a buried layer(BOX) of electrically insulating silicon dioxide, over a bulk silicon support wafer (HANDLE). SOI wafers are unique products which are custom built for specific end-user applications. SICREAT offers two types of SOI: Thick Film and Thin Film.

Thick Film                                                                      Thin Film
Material: Silicon                                                              Material: Silicon
Wafer Diameter: 76.2mm (3”) to 200mm (8”)                  Wafer Diameter: 150mm (6”), 200mm (8”)
Type/Dopant: N or P                                                       Type/Dopant: N or P
Device Layer Thickness: >1.5um                                    Device Layer: >20nm (0.02um)

    Cz and Fz grown silicon SOI
    Single side polish and double side polish
    Prototype and production volumes
    Consistent, reliable production supply line
    Competitive pricing
    Excess inventory

Silicon On Insulator Wafers(SOI)

Please CONTACT SICREAT for further information on SOI products or to discuss your current requirements.
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